Most commonly used in MEMS and advanced CMOS integrated circuit fabrication, SOI wafers provide a manufacturing solution which helps reduce power and heat while increasing the speed performance of a device. SOI wafers are a three layer material stack composed of the following: Active layer of prime quality silicon (DEVICE LAYER) over a buried layer(BOX) of electrically insulating silicon dioxide, over a bulk silicon support wafer (HANDLE). SOI wafers are unique products which are custom built for specific end-user applications. SVM offers two types of SOI: Thick Film and Thin Film.

 

Specifications:

Thick Film Thin Film
Material: Silicon Material: Silicon
Wafer Diameter: 76.2mm (3”) to 200mm (8”) Wafer Diameter: 150mm (6”), 200mm (8”), 300mm (12”)
Type/Dopant: N or P Type/Dopant: N or P
Device Layer Thickness: >1.5um Device Layer: >20nm (0.02um)

 

  • Cz and Fz grown silicon SOI
  • Single side polish and double side polish
  • Prototype and production volumes
  • Consistent, reliable production supply line
  • Competitive pricing
  • Excess inventory

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SVM is currently carrying excess inventory of the following Thick Film SOI wafer specification:

Silicon SOI wafer
Diameter: 150mm
Orientation: <100>
TTV: <8um
Bow/Warp:<30um
Front Surface: Polished
Back Surface: Etched
DEVICE Layer:
Type/Dopant: N/Phos
Resistivity: 1-5 ohm-cm
Thickness: 2-3um
BOX Layer:
Thickness: 1um +/-0.1um
HANDLE wafer:
Type/Dopant: P/Boron
Resistivity: 10-20 ohm-cm
Thickness: 625+/-15um
*** Wafers are Subject to Prior Sales******

 

Silicon On Insulator Wafers(SOI)

Please CONTACT SVM for further information on SOI products or to discuss your current requirements.

Silicon Wafers Non-Silicon Wafers
Wafer Services Lithography and Custom Films