200 mm (8”) wafers were introduced in 1985 and are still considered the industry standard today. There are more 200 mm wafers produced world wide than any other diameter. These wafers are used for a variety of applications that include testing and calibrating equipment to devices that might be used in your cellular phone or flat screen television. SVM carries a large variety of 200 mm wafers in our multi-million dollar inventory. Here are examples of some of the specifications available. Please contact SVM for more information or additional specifications.

Diameter: 200 +/- 0.2 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1º
Growth Method: Cz
Resistivity: 10-30 Ω-cm
Metals: <5xE9
Thickness: 700-750 μm
TTV: <=3 μm
GTIR: <=5 μm
Bow/Warp: <=40 μm
Site Flatness (STIR): <=1 μm
Front Surface: Polished
Particle Count: <=50@>=0.12 μm
Back Surface: Etched
Notch: SEMI Standard
Edges: Rounded and polished per SEMI Standard

Diameter: 200 +/- 0.2 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1º
Growth Method: Cz
Resistivity: 10-20 Ω-cm
Metals: <5xE10
Thickness: 710-740 μm
TTV: <=6 μm
Bow/Warp: <=40 μm
Site Flatness (STIR): <=2 μm
Front Surface: Polished
Particle Count: <=50@>=0.16 μm
Back Surface: Etched
Notch: SEMI Standard
Edges: Rounded and polished per SEMI Standard

Diameter: 200 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1º
Growth Method: Cz
Resistivity: 1-100 Ω-cm
Metals: <5xE10
Thickness: 700-750 μm
TTV: <=4 μm
Bow/Warp: <=40 μm
Site Flatness (STIR): <=0.2 μm
Front Surface: Polished
Particle Count: <=50@>=0.16 μm
Back Surface: Etched
Notch: SEMI Standard
Edges: Rounded and polished per SEMI Standard

Diameter: 200 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1º
Growth Method: Cz
Resistivity: 1-50 Ω-cm
Thickness: 700-750 μm
TTV: <=10 μm
Bow/Warp: <=50 μm
Front Surface: Polished
Particle Count: <=30@>=0.2 μm
Back Surface: Etched
Notch: SEMI Standard
Edges: Rounded and polished per SEMI Standard

Diameter: 200 +/- 0.2 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1º
Growth Method: Cz
Resistivity: 0.005-0.02 Ω-cm
Metals: <5xE9
Thickness: 700-750 μm
TTV: <=5 μm
GTIR: <= 5 μm
Bow/Warp: <=40 μm
Site Flatness (STIR): <=1 μm
Front Surface: Polished
Particle Count: <=50@>=0.16 μm
Back Surface: Etched
Notch: SEMI Standard
Edges: Rounded and polished per SEMI Standard

Diameter: 200 +/- 0.2 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1º
Growth Method: Cz
Grade: Epi
Resistivity: Customer Specified
Thickness: 700-750 μm
Epi Layer Thickness: Customer Specified
TTV: <=10 μm
Bow/Warp: <=40 μm
Front Surface: Polished
Back Surface: Etched or Oxide Back Seal
Notch: SEMI Standard
Edges: Rounded and polished per SEMI Standard