Most commonly used in Microelectromechanical Systems (MEMS) and advanced Complementary metal–oxide–semiconductor (CMOS) integrated circuit fabrication, Silicon on Insulator (SOI) wafers provide a manufacturing solution which helps reduce power and heat while increasing the speed performance of a device. SOI wafers are a three layer material stack composed of the following: Active layer of prime quality silicon (DEVICE LAYER) over a buried oxide layer (BOX) of electrically insulating silicon dioxide, over a bulk silicon support wafer (HANDLE). SOI wafers are unique products which are custom built for specific end-user applications.

SVM offers two types of SOI: Thick Film and Thin Film.

 

Specifications:

Thick Film Thin Film
Material: Silicon Material: Silicon
Wafer Diameter: 76.2mm (3”) to 200mm (8”) Wafer Diameter: 150mm (6”), 200mm (8”), 300mm (12”)
Type/Dopant: N or P Type/Dopant: N or P
Device Layer Thickness: >1.5um Device Layer: >20nm (0.02um)

 

  • CZ and FZ grown silicon SOI
  • Single side polish and double side polish
  • Prototype and production volumes
  • Consistent, reliable production supply line
  • Competitive pricing

 

Silicon On Insulator Wafers(SOI)

Please CONTACT SVM for further information on SOI wafers, to place an order or to discuss your current requirements.

Silicon Wafers Non-Silicon Wafers
Wafer Services Lithography and Custom Films