Most commonly used in Microelectromechanical Systems (MEMS) and advanced Complementary metal–oxide–semiconductor (CMOS) integrated circuit fabrication, Silicon on Insulator (SOI) wafers provide a manufacturing solution which helps reduce power and heat while increasing the speed performance of a device. SOI wafers are a three layer material stack composed of the following: Active layer of prime quality silicon (DEVICE LAYER) over a buried oxide layer (BOX) of electrically insulating silicon dioxide, over a bulk silicon support wafer (HANDLE). SOI wafers are unique products which are custom built for specific end-user applications.
SVM offers two types of SOI: Thick Film and Thin Film.
|Thick Film||Thin Film|
|Material: Silicon||Material: Silicon|
|Wafer Diameter: 76.2mm (3”) to 200mm (8”)||Wafer Diameter: 150mm (6”), 200mm (8”), 300mm (12”)|
|Type/Dopant: N or P||Type/Dopant: N or P|
|Device Layer Thickness: >1.5um||Device Layer: >20nm (0.02um)|
- CZ and FZ grown silicon SOI
- Single side polish and double side polish
- Prototype and production volumes
- Consistent, reliable production supply line
- Competitive pricing
Please CONTACT SVM for further information on SOI wafers, to place an order or to discuss your current requirements.